
Manufacturer | Toshiba Semiconductor and Storage |
Manufacturer Product Number | GT60N321(Q) |
Stock | 48658 |
Package | Tube |
Series | |
IGBT Type | |
Voltage - Collector Emitter Breakdown (Max) | 1000 V |
Current - Collector (Ic) (Max) | 60 A |
Current - Collector Pulsed (Icm) | 120 A |
Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A |
Power - Max | 170 W |
Switching Energy | |
Input Type | Standard |
Gate Charge | |
Td (on/off) @ 25°C | 330ns/700ns |
Test Condition | |
Reverse Recovery Time (trr) | 2.5 µs |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-3PL |
Supplier Device Package | TO-3P(LH) |
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