Manufacturer | Toshiba Semiconductor and Storage |
Manufacturer Product Number | GT40QR21(STA1,E,D |
Stock | 89275 |
Package | Tube |
Series | |
IGBT Type | |
Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Current - Collector (Ic) (Max) | 40 A |
Current - Collector Pulsed (Icm) | 80 A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 40A |
Power - Max | 230 W |
Switching Energy | -, 290µJ (off) |
Input Type | Standard |
Gate Charge | |
Td (on/off) @ 25°C | |
Test Condition | 280V, 40A, 10Ohm, 20V |
Reverse Recovery Time (trr) | 600 ns |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Supplier Device Package | TO-3P(N) |
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