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| Manufacturer | NXP USA Inc. |
| Manufacturer Product Number | BUK9E15-60E,127 |
| Stock | 28837 |
| Package | Tube,Tube |
| Series | TrenchMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 20.5 nC @ 5 V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2651 pF @ 25 V |
| FET Feature | |
| Power Dissipation (Max) | 96W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I2PAK |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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