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| Manufacturer | Taiwan Semiconductor Corporation |
| Manufacturer Product Number | TSM9ND50CI |
| Stock | 59996 |
| Package | Tube |
| Series | |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2.3A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 24.5 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1116 pF @ 50 V |
| FET Feature | |
| Power Dissipation (Max) | 50W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | ITO-220 |
| Package / Case | TO-220-3 Full Pack, Isolated Tab |
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