
Manufacturer | IXYS |
Manufacturer Product Number | MCB60I1200TZ |
Stock | 5887 |
Package | Tube |
Series | |
FET Type | N-Channel |
Technology | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V |
Vgs(th) (Max) @ Id | 4V @ 15mA |
Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 20 V |
Vgs (Max) | +20V, -5V |
Input Capacitance (Ciss) (Max) @ Vds | 2790 pF @ 1000 V |
FET Feature | |
Power Dissipation (Max) | |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-268AA (D3Pak-HV) |
Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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