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| Manufacturer | Taiwan Semiconductor Corporation |
| Manufacturer Product Number | TSM2N7000KCT B0G |
| Stock | 2779 |
| Package | Box |
| Series | |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 100mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.4 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V |
| FET Feature | |
| Power Dissipation (Max) | 400mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-92 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
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