
Manufacturer | Infineon Technologies |
Manufacturer Product Number | IPS65R650CEAKMA1 |
Stock | 86059 |
Package | Bulk,Tube |
Series | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 700 V |
Current - Continuous Drain (Id) @ 25°C | 10.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 650mOhm @ 2.1A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 210µA |
Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
FET Feature | |
Power Dissipation (Max) | 86W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO251-3 |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
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